F Series Partially Depleted Silicon Surface Barrier Radiation Detector

Main Application
Heavy-Ion spectroscopy.
  • Literature +

  • Mounting Arrangements +


    A  This is a "ring mount"; i.e., the silicon wafer is offered on its ring without output connectors. This infrequently used arrangement is available on special request.

    B
     Microdot connector on the rear of the can.

    C  BNC connector on the rear of the can.

    Dimensions given in millimeters. 


    Detector Size (mm2)

    W (Nominal)
    Type A  Type B Rear Microdot Type C Rear BNC
    X Y  X Y Z X Y Z
     100  11.3 22.0 3.7
    23.6 12.3 7.1 23.6 12.3 15.9
     300  19.5 27.1 3.7
    28.6 12.3 7.1 28.6 12.3 15.9
     400 22.6 30.5 3.7
    32.0 12.3
    7.1 32.0 12.3
    15.9
     600  27.6 34.1 3.7
    36.1 12.3
    7.1
    36.1 12.3
    15.9
     900  33.9 43.2 3.7
    45.2 12.3
    7.1
    45.2 12.3
    15.9
     Tolerance ±0.5 ±0.3
    ±0.3
    ±0.3
    ±0.3
    ±0.3
    ±0.3
    ±0.3
    ±0.3
  • Ordering Information +


    Supplied with B Mount unless otherwise specified. 

    *All standard heavy-ion detectors are cut off-axis from the parent crystal at a specific angle that will minimize channeling. Supplied in B Mount unless specified otherwise by the appropriate letter prefix.

    **>Greater depths on special order.

    †Maximum field strength ≥15 kV/cm.


    Active Area (mm2)

    Maximum Noise (keV)

    ≥60 µm Partially Depleted
    Model No.
    100 18 F-018-100-60
    300 23 F-023-300-60
    400 28 F-028-400-60
    600 33 F-033-600-60
    900 35 F-035-900-60